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GaN IMFET氮化镓微波功率晶体管代表了国产GaN功放管的最高技术水平|技术参数和表现达到了国外同类氮化镓微波功率晶体管的水平
  • GaN IMFET氮化镓微波功率晶体管代表了国产GaN功放管的最高技术水平|技术参数和表现达到了国外同类氮化镓微波功率晶体管的水平

GaN IMFET微波功率晶体管

该系列GaN IMFET氮化镓微波功率晶体管代表了国产GaN功放管的最高技术水平,技术参数和表现达到了国外同类氮化镓微波功率晶体管的水平,但是氮化镓微波功率晶体管价格具有很强的竞争力。
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该系列GaN IMFET氮化镓微波功率晶体管代表了国产GaN功放管的最高技术水平,技术参数和表现达到了国外同类氮化镓微波功率晶体管的水平,但是氮化镓微波功率晶体管价格具有很强的竞争力。详情联系我们。
GaN IMFET made in China have continued to improve and refine, enabling Gallium Nitride (GaN) transistors to operate at higher frequencies and produce higher output power, widely used in RF amplifiers, which allows earth stations to communicate with those satellites in the sky.

GaN IMFET made in China are much smaller and efficient than in the past. GaN technology is still new as compared with Si and GaAs technology but engineers are starting to explore its benefits and capabilities. GaN has high breakdown field, high saturation velocity and outstanding thermal properties making it very suitable for demanding VSAT applications.

The device is GaN IMFET fully matched to 50 Ωin an industry standard air cavity package and is ideally suited for military and civilian radar.  The device can support pulsed and linear operations.
Lead-free and ROHS compliant,Evaluation boards are available upon request.

GaN IMFET微波功率晶体管
Key Features
 *   Frequency: 1.2 to 1.4 GHz
 *   Output Power (P3dB)  : 540 W
*   Linear Gain  : 19.9 dB
 *   Typical PAE3dB1: 66.7%
 *   Operating Voltage: 50 V
*   Low thermal resistance package
*   Pulse capable
Note 1: @ 1.3 GH
GaN IMFET微波功率晶体管
 

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